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| BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) FEATURES: * LF Large Signal Power Amplification * Medium Current Switching 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Package. Pin 1 - Base Pin 2 - Emitter Case - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC IB Ptot TJ TSTG Rth-(j-c) Collector - Base Voltage (Open Emitter) Collector - Emitter Voltage (Open Base) Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Power Dissipation Maximum Junction Temperature Storage Temperature Junction to Case. RBE =100W VBE = +1.5V - 90V - 55V - 60V - 90V -7V -4V -2V 29W 200C -65 to 200C 6C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 02/00 BDX14AA ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ICEX Collector Emitter Cut Off Current Test Conditions VCE = -90V VCE = -30V IC = -100mA IC = -100mA IE = -1A VBE = +1.5V VBE = +1.5V Tcase = 150C IB = 0 RBE = 100W IC =0 IC = - 0.5A IB = - 0.05A IC = - 0.5A IC = - 0.2A Min. Typ. Max. -1 -5 Unit mA VCEO(SUS)* Collector Emitter Breakdown Voltage VCER(SUS)* Collector Emitter Breakdown Voltage V(BR)EBO* h21E* VCE(sat)* VBE* fT Emitter Base Breakdown Voltage -55 -60 -7 25 250 -1 -1.7 4 V V -- V V MHz Static Forward Current Transfer Ratio VCE = - 4V Collector Emitter Saturation Voltage Base Emitter Voltage Transition Frequency IC = - 0.5A VCE = - 4V VCB = -10V f = 1MHz * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 02/00 |
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